Composite Transistors
XN4502
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15 6 0....
Composite
Transistors
XN4502
Silicon
NPN epitaxial planer
transistor
Unit: mm
For general amplification
0.65±0.15 6 0.95
2.8 –0.3
+0.2 +0.25
1.5 –0.05
0.65±0.15 1
0.3 –0.05
2.9 –0.05
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SD602A × 2 elements
1.1–0.1
0.4±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 60 50 5 0.5 1 300 150 –55 to +150 Unit V V V A A mW ˚C ˚C
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 5Q Internal Connection
6 5 4 Tr1 1 2 3
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IC = 150mA* VCE = 10V, IC = 500mA* IC = 300mA, IB = 30mA* VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 85 40...
