Composite Transistors
XN4482
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15 6 0....
Composite
Transistors
XN4482
Silicon
PNP epitaxial planer
transistor
Unit: mm
For general amplification
0.65±0.15 6 0.95
2.8 –0.3
+0.2 +0.25
1.5 –0.05
0.65±0.15 1
2.9 –0.05
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
1.1–0.1
q
2SB709+2SB710
0.4±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings –60 –50 –7 –100 –200 –60 –50 –5 –500 –1 300 150 –55 to +150 Unit V V V mA mA V V V mA A mW ˚C ˚C
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: ON Internal Connection
6 5 4 Tr1 1 2 3
Tr2
0 to 0.05
0.1 to 0.3
0.8
0.16–0.06
+0.2
s Basic Part Number of Element
+0.1
1.45±0.1
s Features
0.3 –0.05
0.5 –0.05
+0.1
+0.1
1
Composite
Transistors
XN4482
(Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –20V, IE = 0 VCE = –10V, IB = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –1...