PD 9.1407
PRELIMINARY
IRFIZ48N
HEXFET® Power MOSFET
D
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
U
G
VDSS = 55V RDS(on) = 0.016Ω ID = 36A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...
