PD - 9.1674A
IRFIZ34E
HEXFET® Power MOSFET
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Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 0.042Ω
G S
ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex...
