IRFI510

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) * Ο Ο Ο Value 100 5.6 4 1 O Units V A A V mJ A mJ V/ns W W W/ C Ο 20 + _ 20 63 5.6 3.3 6.5 3.8 33 0.22 - 55 to +175 Ο O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο TJ , TSTG TL C 300 Thermal Resistance Symbol R θJC R θJA R θJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 4.51 40 62.5 Ο Units C/ /W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFW/I510A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS I...