PD - 9.1611A
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRFI1310N
HEXFET® Power MOSFET
D
VDSS = 100V
G S
RDS(on) = 0.036Ω ID = 24A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t...
