PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.012Ω
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e...
