IRFF9230

IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17512. Features -4.0A, -200V rDS(ON) = 0.800Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9230 PACKAGE TO-205AF BRAND IRFF9230 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-114 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9230 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF9230 -200 -200 -4.0 -16 ±20 25 0.2 500 -55 to 150 300 UNITS V V A A V W W/oC mJ oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . ...