PD -90433C
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Product Summary
Part Number ...
PD -90433C
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
TRANSISTORS THRU-HOLE (TO-205AF)
Product Summary
Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A
IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n n n n n
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to...