IRFF430
Data Sheet March 1999 File Number 1894.4
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancem...
IRFF430
Data Sheet March 1999 File Number 1894.4
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect
transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17415.
Features
2.75A, 500V rDS(ON) = 1.500Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFF430 PACKAGE TO-205AF BRAND IRFF430
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFF430
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFF430 500 500 2.75 11 ±20 25 0.2 300 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC
...