IRFE9130

IRFE9130 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) VDSS ID(cont) RDS(on) FEATURES SURFACE MOUNT SMALL FOOTPRINT -100V -6.1A 0.345Ω 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 MOSFET GATE DRAIN SOURCE HERMETICALLY SEALED PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER DYNAMIC dv/dt RATING AVALANCHE ENERGY RATING SIMPLE DRIVE REQUIREMENTS LIGHT WEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). ±20V – 6.1A – 3.8A – 24A 22W 0.17W/°C 92mJ – 5.5V/ns – 55 to +150°C 300°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 10/98 IRFE9130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coeff...