IRFE230

IRFE230 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES SURFACE MOUNT SMALL FOOTPRINT 200V 4.8A 0.46Ω 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. HERMETICALLY SEALED DYNAMIC dv/dt RATING LCC4 MOSFET GATE DRAIN SOURCE AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER SIMPLE DRIVE REQUIREMENTS LIGHT WEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 2 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 4.8A 3.1A 19A 22W 0.17W/°C 54mJ 4.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]...