IRFE130

IRFE130 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES 100V 7.44A 0.207Ω 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) SURFACE MOUNT SMALL FOORPRINT HERMETICALLY SEALED DYNAMIC dv/dt RATING 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 MOSFET GATE DRAIN SOURCE AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 2 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 7.4A 4.7A 30A 22W 0.17W/°C 75mJ 5.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab...