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IRFD310

N-Channel Power MOSFET

Description

IRFD310 Data Sheet July 1999 File Number 2324.4 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are de...

Intersil Corporation

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