IRFD120

IRFD120 Data Sheet July 1999 File Number 2315.3 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17401. Features 1.3A, 100V rDS(ON) = 0.300Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD120 PACKAGE HEXDIP BRAND IRFD120 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-275 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD120 100 100 1.3 5.2 ±20 1.0 0.008 36 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) ...