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IRFBC30S

Part Number	IRFBC30S
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-...
Datasheet	IRFBC30S PDF File

Overview

PD - 9.
1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 2.
2Ω G ID = 3.
6A S Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mo...

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