Document
PD - 94300
SMPS MOSFET
IRFBA90N20D
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.023Ω
ID
98A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
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Super-220™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended Clip Force
Max. 98 71
390 650 4.3 ± 30 6.3 -55 to + 175 300 (1.6mm from case ) 20
Units
A W W/°C V V/ns °C N
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.23 ––– 58
Units
°C/W
Notes
through
are on page 8
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1
09/06/01
IRFBA90N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.22 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.023 Ω VGS = 10V, ID = 59A 5.0 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 41 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 160 45 75 23 160 39 77 6080 1040 150 7500 410 790 Max. Units Conditions ––– S VDS = 50V, ID = 59A 240 ID = 59A 67 nC VDS = 160V 110 VGS = 10V ––– VDD = 100V ––– ID = 59A ns ––– RG = 1.2Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
960 59 65
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 98 ––– ––– showing the A G integral reverse ––– ––– 390 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 59A, VGS = 0V ––– 220 340 nS TJ = 25°C, IF = 59A ––– 1.9 2.8 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFBA90N20D
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
100
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1
5.0V
10
5.0V
0.1
20µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100 1 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100
LIMITED BY PACKAGE
ID , Drain-to-Source Current (Α )
T J = 175°C
80
100.00
I D , Drain Current (A)
60
10.00
T J = 25°C
1.00
40
20
0.10 5.0 7.0 9.0
VDS = 15V 20µs PULSE WIDTH
0
11.0
13.0
15.0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , Case Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFBA90N20D
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd , C ds SHORTED Crss = C gd Coss = C ds + Cgd
VGS, Gate-to-Source Voltage (V)
12
ID = 59A
10
VDS = 160V VDS = 100V VDS = 40V
10000
C, Capacitance(pF)
Ciss Coss
7
1000
5
Crss
100
2
10 1 10 100 1000
0 0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
10000 OPERATION IN THIS AREA LIMITED BY R DS (on)
100.00
TJ = 175°C
10.00
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100µsec 10 1msec
1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD , Source-toDrain Voltage (V)
1
Tc = 25°C Tj = 175°C Sing.