Power MOSFET
PD- 94080
IRFB4710 IRFS4710 IRFSL4710
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Contr...
Description
PD- 94080
IRFB4710 IRFS4710 IRFSL4710
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
VDSS
100V
RDS(on) max
0.014Ω
ID
75A
TO-220AB IRFB4710
D2Pak IRFS4710
TO-262 IRFSL4710
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
75 53 300 3.8 200 1.4 ± 20 8.2 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11
Typ.
––– 0.50 ––– –––
Max.
0.74 ––– 62 40
Units
°C/W
www.irf.com
1
3/16/01
IRFB/IRFS/IRFL4710
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th...
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