Power MOSFET
PD - 94339
SMPS MOSFET
IRFB13N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptib...
Description
PD - 94339
SMPS MOSFET
IRFB13N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching
VDSS
500V
RDS(on) max
0.450 Ω
ID
14A
Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw
Max.
14 9.1 56 250 2.0 ± 30 9.2 -55 to + 150 300 10
Units
A W W/°C V V/ns
°C lbfin (1.1Nm)
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
560 14 25
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.50 ––– 62
Units
°C/W
www.irf.com
1
12/10/01
IRFB13N50A
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coeffic...
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