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IRF9Z34L Dataheets PDF



Part Number IRF9Z34L
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9Z34L DatasheetIRF9Z34L Datasheet (PDF)

PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggediz.

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PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -18 -13 -72 3.7 88 0.59 ± 20 370 -18 8.8 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter Rθ JC Rθ JA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 1.7 40 Units °C/W 8/25/97 IRF9Z34S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆ TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -60 ––– ––– -2.0 5.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.06 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 18 120 20 58 7.5 1100 620 100 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID =-1mA… 0.14 Ω VGS =-10V, ID = -11A „ -4.0 V VDS = VGS, I D = -250µA ––– S VDS = -25V, I D = -11A… -100 VDS = -60V, VGS = 0V µA -500 VDS = -48V, VGS = 0V, TJ = 150°C -100 V GS = -20V nA 100 VGS = 20V 34 ID = -18A 9.9 nC VDS = -48V 16 V GS = -10V, See Fig. 6 and 13 „… ––– VDD = -30V ––– ID = -18A ns ––– RG = 12Ω ––– RD = 1.5Ω, See Fig. 10 „ Between lead, nH ––– and center of die contact ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -18 showing the A G integral reverse ––– ––– -72 p-n junction diode. S ––– ––– -6.3 V TJ = 25°C, IS = -18A, VGS = 0V „ ––– 100 200 ns TJ = 25°C, IF = -18A ––– 280 520 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = -25V, starting TJ = 25°C, L = 1.3mH RG = 25Ω, IAS = -18A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRF9Z34 data and test conditions ƒ I SD ≤ -18A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRF9Z34S/L TJ TJ IRF9Z34S/L IRF9Z34S/L IRF9Z34S/L IRF9Z34S/L Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple .


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