IRF9640, RF1S9640SM
Data Sheet July 1999 File Number
2284.2
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MO...
