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IRF9510

P-Channel Power MOSFET

Description

IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for a...

Intersil Corporation

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