IRF830

® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 500 500 ± 20 4.5 2.9 18 100 0.8 3.5 -65 to 150 150 Uni t V V V A A A W W/ C V/ ns o o o C C () Pulse width limited by safe operating area (1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF830 THERMAL DATA R t hj-c...