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IRF7831

International Rectifier

HEXFET Power MOSFET

PD - 94636 IRF7831 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Appl...


International Rectifier

IRF7831

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Description
PD - 94636 IRF7831 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max 30V 3.6m @VGS = 10V : Qg (typ.) 40nC S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 12 21 17 170 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f Power Dissipation c A W Linear Derating Factor Operating Junction and Storage Temperature Range W/°C °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W f Notes  through „ are on page 10 www.irf.com 1 7/9/03 IRF7831 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductan...




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