Power MOSFET
PD - 94579B
IRF7821
HEXFET® Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for App...
Description
PD - 94579B
IRF7821
HEXFET® Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current VDSS 30V RDS(on) max 9.1mW@VGS= 10V Qg(typ.) 9.3nC
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 ± 20 13.6 11 100 2.5 1.6 0.02 -55 to + 155
Units
V
f f
c
A W
Linear Derating Factor Operating Junction and Storage Temperature Range
W/°C °C
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
1/14/03
IRF7821
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total...
Similar Datasheet