IRF7805

PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters. 4 5 SO-8 T o p V ie w Device Features IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6 –55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max. 50 Units °C/W www.irf.com 1 10/10/00 IRF7805/IRF7805A Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(...