IRF7534D1

PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode Co-packaged power MOSFET and Schottky diode q Ultra Low On-Resistance MOSFET q Trench technology TM Footprint q Micro8 q Available in Tape & Reel Description q HEXFET® A A S G 1 8 K K D D 2 7 VDSS = -20V RDS(on) = 0.055Ω Schottky Vf=0.39V 3 6 4 5 T op V ie w The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc. The Micro8TM package makes an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics Micro8™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Ju...