PD- 91647C
IRF7523D1
FETKY™ MOSFET / Schottky Diode
q q q q q
Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Ch...
PD- 91647C
IRF7523D1
FETKY™ MOSFET /
Schottky Diode
q q q q q
Co-packaged HEXFET® Power MOSFET and
Schottky Diode N-Channel HEXFET Low VF
Schottky Rectifier Generation 5 Technology Micro8TM Footprint
A A S G
1
8
K K D D
VDSS = 30V RDS(on) = 0.11Ω
Schottky Vf = 0.39V
2
7
3
6
4
5
Description
T op V ie w
The FETKYTM family of co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8TM package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Fac...