IRF7484

PD - 94446B Typical Applications l l l IRF7484 HEXFET® Power MOSFET Relay replacement Anti-lock Braking System Air Bag Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS RDS(on) max (mW) 40V 10@VGS = 7.0V ID 14A Benefits l l l l S S 1 8 A A D D D D 2 7 Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy„ Avalanche Current Repetitive Avalanche Energy† Junction and Storage Temperature Range Max. 14 11 110 2.5 0.02 ± 8.0 230 See Fig.16c, 16d, 19, 20 -55 to + 150 Units A W W/°C V mJ A mJ °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 50 ...