Power MOSFET
PD - 93886D
SMPS MOSFET
IRF7460
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Syn...
Description
PD - 93886D
SMPS MOSFET
IRF7460
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
S S
VDSS
20V
RDS(on) max(mΩ)
10@VGS = 10V
ID
12A
1
8 7
A A D D D D
2
Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
S G
3
6
4
5
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 12 10 100 2.5 1.6 0.02 -55 to + 150
Units
V V A W W mW/°C °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through
are on page 8
www.irf.com
1
3/25/01
IRF7460
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.089 7.2 10....
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