Document
PD - 91645A
IRF7389
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8
D1 D1 D2 D2
N-Ch VDSS 30V
P-Ch -30V
2
7
3
6
4
5
P-CHANNEL MOSFET
RDS(on) 0.029Ω 0.058Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C V DS V GS N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 82 4.0 0.20 3.8 -2.2 -55 to + 150 °C 140 -2.8
Maximum P-Channel
-30 ± 20 -5.3 -4.2 -30 -2.5
Units
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
IDM IS
A
W mJ A mJ V/ ns
EAS IAR EAR dv/dt TJ, TSTG
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
RθJA
Limit
50
Units
°C/W
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1
02/25/04
IRF7389
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 Typ. Max. 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 14 7.7 1.0 -1.0 25 -25 ±100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55°C VDS = -24V, V GS = 0V, TJ = 55°C VGS = ±20V N-Channel I D = 5.8A, VDS = 15V, VGS = 10V P-Channel I D = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0Ω, RD = 15Ω P-Channel VDD = -15V, ID = -1.0A, RG = 6.0Ω, RD = 15Ω N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V 45 68 N-Channel ns 44 66 TJ = 25°C, I F =1.7A, di/dt = 100A/µs 58 87 P-Channel nC TJ = 25°C, I F = -1.7A, di/dt = 100A/µs 42 63
Repetitive rating; pulse width limited by
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t ≤ 10sec. N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel I SD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
2
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N-Channel
100
IRF7389
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
I D , Drain-to-Source Current (A)
10
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
10
3.0V
3.0V
1 0.1 1
20µs PULSE WIDTH T.