HEXFET POWER MOSFET
PD - 95039
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanch...
Description
PD - 95039
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7313PbF
HEXFET® Power MOSFET
S1
1
G1
2
8
D1
7
D1
VDSS = 30V
S2
3
6
D2
G2
4
5 D2 RDS(on) = 0.029Ω
Top View
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA = 25°C TA = 70°C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Maximum Power Dissipation
TA = 25°C TA = 70°C
PD
Single Pulse Avalanche Energy
EAS
30 ± 20 6.5 5.2 30 2.5 2.0 1.3 82
Avalanche Current
IAR
4.0
Repetitive Avalanche Energy Peak Diod...
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