IRF730

IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17414. Features 5.5A, 400V rDS(ON) = 1.000Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF730 PACKAGE TO-220AB BRAND IRF730 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-232 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF730 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF730 400 400 5.5 3.5 22 ±20 75 0.6 300 -55 to 150 300 260 UNITS V V A A A V ...