Document
PD - 9.1098B
PRELIMINARY
IRF7106
N-CHANNEL MOSFET 1 8
HEXFET ® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S1 G1 S2 G2
D1 D1 D2 D2
N-Ch VDSS 20V
P-Ch -20V
2
7
3
6
4
5
RDS(on) 0.125Ω 0.20Ω ID 3.0A -2.5A
P-CHANNEL MOSFET
Top View
SO-8
Absolute Maximum Ratings
Parameter
N-Channel ID @ T C = 25°C ID @ T C = 70°C IDM PD @T C = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2.0 0.016 ± 20 3.0 -55 to + 150 -3.0
Max.
P-Channel -2.5 -2.0 -10
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJA Junction-to-Ambient (PCB Mount)**
Min.
––––
Typ.
––––
Max.
62.5
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 3
69
IRF7106
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 — — — — — — 1.0 -1.0 — — — — — — –– — — — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.037 — -0.022 — — 0.125 — 0.25 — 0.20 — 0.35 — — — — 4.4 — 3.0 — — 2.0 — -2.0 — 25 — -25 — ±100 9.1 25 11 25 1.2 — 1.6 — 2.5 — 3.5 — 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 — 6.0 — 300 — 280 — 260 — 250 — 62 — 86 — Units V V/°C
Ω
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V S
IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Imput Capacitance Coss Output Capacitance
µA nA
Conditions VGS = 0V, I D = 250µA VGS = 0V, I D = -250µA Reference to 25°C, I D = 1mA Reference to 25°C, I D = -1mA VGS = 10V, I D = 1.0A VGS = 4.5V, I D = 0.50A VGS = -10V, I D = -1.0A VGS = -4.5V, I D = -0.50A VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 15V, ID = 3.0A VDS = -15V, ID = -3.0A VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 125°C VDS = -16V, VGS = 0V, T J = 125°C VGS = ± 20V N-Channel ID = 2.3A, V DS = 10V, V GS = 10V
nC P-Channel ID = -2.3A, V DS = -10V, V GS = -10V N-Channel VDD = 20V, I D = 1.0A, R G = 6.0 Ω, RD = 20Ω ns P-Channel VDD = -20V, I D = -1.0A, R G = 6.0 Ω, RD = 20Ω nH Between lead tip and center of die contact N-Channel VGS = 0V, V DS = 15V, ƒ = 1.0MHz pF P-Channel VGS = 0V, V DS = -15V, ƒ = 1.0MHz
Crss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions — — 1.7 — — -1.6 A — — 10 — — -10 — 0.90 1.2 T J = 25°C, I S = 1.6A, V GS = 0V V — -0.90 -1.6 T J = 25°C, I S = -1.3A, V GS = 0V — 69 100 ns N-Channel — 69 100 T J = 25°C, I F = 1.25A, di/dt = 100A/µs — 58 120 nC P-Channel T J = 25°C, I F = -1.25A, di/dt = 100A/µs — 91 180 Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.3A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, T J ≤ 150°C P-Channel ISD ≤ -2.3A, di/dt ≤ 50A/µs, V DD ≤ V(BR)DSS, T J ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
70
N-Channel
100
IRF7106
100
I , Drain-to-Source Current (A) D
10
4.5V
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6..