DatasheetsPDF.com

IRF6644 Dataheets PDF



Part Number IRF6644
Manufacturers International Rectifier
Logo International Rectifier
Description DirectFETPower MOSFET
Datasheet IRF6644 DatasheetIRF6644 Datasheet (PDF)

PD - 96908C IRF6644 DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 11.5nC RDS(on) Vgs(th) 3.7V 100V ma.

  IRF6644   IRF6644


Document
PD - 96908C IRF6644 DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 11.5nC RDS(on) Vgs(th) 3.7V 100V max ±20V max 10.7mΩ@ 10V 35nC MN Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MN DirectFET™ ISOMETRIC Description The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 0.12 Typical R DS (on), (Ω) (mΩ) Max. 100 ±20 10.3 8.3 60 82 220 6.2 14 TA= 25°C 13 Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current g e e @ 10V f h A Single Pulse Avalanche Energy Ãg mJ A ID = 6.2A 0.08 VGS = 7.0V VGS = 8.0V DS(on) 12 0.04 TJ = 125°C 0.00 4.0 TJ = 25°C 6.0 8.0 10.0 12.0 14.0 VGS, Gate-to-Source Voltage (V) 16.0 Typical R VGS = 10V VGS = 15V 11 10 0 4 8 12 16 20 ID, Drain Current (A) Fig 2. Typical On-Resistance Vs. Drain Current Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A. www.irf.com 1 11/23/04 IRF6644 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Min. 100 ––– ––– 2.8 ––– ––– ––– ––– ––– 15 ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 0.11 10.7 ––– -10 ––– ––– ––– ––– ––– 35 8.0 1.6 11.5 13 13.1 17 1.0 17 26 34 16 2210 420 100 2120 240 ––– ––– 13 4.8 ––– 20 250 100 -100 ––– 47 ––– ––– 17.3 ––– ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz ns nC Ω Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 10.3A c VDS = VGS, ID = 150µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 6.2A VDS = 50V V mΩ V mV/°C µA nA S V/°C Reference to 25°C, ID = 1mA nC VGS = 10V ID = 6.2A See Fig. 17 VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V ID = 6.2A RG=6.2Ω c ––– ––– ––– ––– ––– ––– ––– ––– ––– VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 80V, f=1.0MHz Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d ––– ––– ––– ––– 42 69 1.3 63 100 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 82 Min. ––– Typ. Max. Units ––– 10 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 6.2A, VGS = 0V c TJ =.


IRF6623 IRF6644 IRF6665


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)