Document
PD - 96908C
IRF6644
DirectFET Power MOSFET
l l l l l l l l l
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
11.5nC
RDS(on) Vgs(th)
3.7V
100V max ±20V max 10.7mΩ@ 10V
35nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MN
DirectFET ISOMETRIC
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
0.12
Typical R DS (on), (Ω) (mΩ)
Max.
100 ±20 10.3 8.3 60 82 220 6.2
14 TA= 25°C 13
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current
g
e e @ 10V f h
A
Single Pulse Avalanche Energy
Ãg
mJ A
ID = 6.2A 0.08
VGS = 7.0V VGS = 8.0V
DS(on)
12
0.04 TJ = 125°C 0.00 4.0 TJ = 25°C 6.0 8.0 10.0 12.0 14.0 VGS, Gate-to-Source Voltage (V) 16.0
Typical R
VGS = 10V VGS = 15V
11
10 0 4 8 12 16 20
ID, Drain Current (A)
Fig 2. Typical On-Resistance Vs. Drain Current
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
www.irf.com
1
11/23/04
IRF6644
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
100 ––– ––– 2.8 ––– ––– ––– ––– ––– 15 ––– ––– ––– ––– ––– ––– –––
–––
Typ. Max. Units
––– 0.11 10.7 ––– -10 ––– ––– ––– ––– ––– 35 8.0 1.6 11.5 13 13.1 17 1.0 17 26 34 16 2210 420 100 2120 240 ––– ––– 13 4.8 ––– 20 250 100 -100 ––– 47 ––– ––– 17.3 ––– ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz ns nC
Ω
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 10.3A c VDS = VGS, ID = 150µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 6.2A VDS = 50V
V mΩ V mV/°C µA nA S
V/°C Reference to 25°C, ID = 1mA
nC
VGS = 10V ID = 6.2A See Fig. 17 VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V ID = 6.2A RG=6.2Ω c
––– ––– ––– ––– ––– ––– ––– ––– –––
VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d ––– ––– ––– ––– 42 69 1.3 63 100 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 82
Min.
–––
Typ. Max. Units
––– 10 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 6.2A, VGS = 0V c TJ =.