Document
PD - 94574B
HEXFET®
l l
IRF6607
Power MOSFET
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
VDSS
30V
3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V
RDS(on) max
Qg(typ.)
50nC
MT
MX MT
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max.
30 ±12 94 27 22 220 3.6 2.3 42 0.029 -40 to + 150
Units
V
A
g g
c
W W/°C °C
Thermal Resistance
Parameter
RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
fj gj hj ij
Typ.
––– 12.5 20 ––– –––
Max.
35 ––– ––– 3.0 1.0
Units
°C/W
Notes through are on page 11
www.irf.com
1
4/8/04
IRF6607
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
Min. Typ. Max. Units
30 ––– ––– ––– 1.3 ––– ––– ––– ––– ––– 29 2.5 3.4 ––– -5.3 ––– ––– ––– ––– ––– ––– 50 13 4.0 16 18 20 30 0.6 60 8.0 32 13 6930 1260 510 ––– ––– 3.3 4.4 2.0 ––– 30 50 100 100 -100 ––– 75 ––– ––– ––– ––– ––– ––– 1.9 ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC Ω nC VDS = 15V VGS = 4.5V ID = 20A S nA V mV/°C µA µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
e e
VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 70°C VGS = 12V VGS = -12V VDS = 15V, ID = 20A
IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
––– ––– 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A Clamped Inductive Load
Ãe
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
Ã
d
Typ. ––– ––– –––
Max. 51 20 0.36
Units mJ A mJ
Repetitive Avalanche Energy
––– ––– ––– ––– ––– ––– ––– 1.0 46 54
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
27 A 220 1.3 69 81 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
Ã
p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A di/dt = 100A/µs
e
e
2
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IRF6607
1000
TOP VGS 12V 10V 4.5V 3.0V 2.7V 2.5V 2.2V 2.0V
1000
TOP VGS 12V 10V 4.5V 3.0V 2.7V 2.5V 2.2V 2.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
2.0V
0.1
2.0V 20µs PULSE WIDTH Tj = 150°C
1
20µs PULSE WID.