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IRF6607TR1 Dataheets PDF



Part Number IRF6607TR1
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6607TR1 DatasheetIRF6607TR1 Datasheet (PDF)

PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 50nC MT MX MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ Description The IRF6607 combines the l.

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PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 50nC MT MX MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ±12 94 27 22 220 3.6 2.3 42 0.029 -40 to + 150 Units V A g g c W W/°C °C Thermal Resistance Parameter RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted fj gj hj ij Typ. ––– 12.5 20 ––– ––– Max. 35 ––– ––– 3.0 1.0 Units °C/W Notes  through ˆ are on page 11 www.irf.com 1 4/8/04 IRF6607 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Min. Typ. Max. Units 30 ––– ––– ––– 1.3 ––– ––– ––– ––– ––– 29 2.5 3.4 ––– -5.3 ––– ––– ––– ––– ––– ––– 50 13 4.0 16 18 20 30 0.6 60 8.0 32 13 6930 1260 510 ––– ––– 3.3 4.4 2.0 ––– 30 50 100 100 -100 ––– 75 ––– ––– ––– ––– ––– ––– 1.9 ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC Ω nC VDS = 15V VGS = 4.5V ID = 20A S nA V mV/°C µA µA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A e e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 70°C VGS = 12V VGS = -12V VDS = 15V, ID = 20A IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A Clamped Inductive Load Ãe ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 51 20 0.36 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– 1.0 46 54 Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 27 A 220 1.3 69 81 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A di/dt = 100A/µs e e 2 www.irf.com IRF6607 1000 TOP VGS 12V 10V 4.5V 3.0V 2.7V 2.5V 2.2V 2.0V 1000 TOP VGS 12V 10V 4.5V 3.0V 2.7V 2.5V 2.2V 2.0V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 BOTTOM 10 BOTTOM 1 10 2.0V 0.1 2.0V 20µs PULSE WIDTH Tj = 150°C 1 20µs PULSE WID.


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