Document
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB
version is currently available in a
Deslecardi-pfrteieonconfiguration)
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Document Number: 91038
PD - 94859
IRF644NPbF IRF644NS IRF644NL
HEXFET® Power MOSFET
D VDSS = 250V
RDS(on) = 240mΩ
G
ID = 14A
S
TO-220AB IRF644NPbF
D2Pak IRF644NS
TO-262 IRF644NL
Max. 14 9.9 56 150 1.0 ± 20
180 8.4 15 7.9 -55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
12/2/03 www.vishay.com
1
IRF644NPbF/644NSPbF/644NLPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD Internal Drain Inductance
LS
Ciss Coss Crss
Internal Source Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 250 ––– ––– 2.0 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
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Typ. Max. ––– ––– .