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IRF640S

N-channel TrenchMOS transistor

Description

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Tr...

NXP

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