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IRF640S

Part Number	IRF640S
Manufacturer	STMicroelectronics
Description	N-Channel MOSFET
Published	Apr 16, 2005
Detailed Description	® IRF640S N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET TYPE IRF640S s s s s V DSS 200 V R DS(on) < 0...
Datasheet	IRF640S PDF File

Overview

® IRF640S N - CHANNEL 200V - 0.
150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET TYPE IRF640S s s s s V DSS 200 V R DS(on) < 0.
18 Ω ID 18 A TYPICAL RDS(on) = 0.
150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
D2PAK TO-263 (suffix ”T4”) APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S...

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