N-channel MOSFET
IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package
TAB
TO-220
1 23
Featu...
Description
IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package
TAB
TO-220
1 23
Features
Order code
VDS
IRF630
200 V
Extremely high dv/dt capability Very low intrinsic capacitance Gate charge minimized
RDS(on) max. 0.40 Ω
ID 9A
D(2, TAB)
Applications
Switching applications
G(1) S(3)
AM01475v1_noZen
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Product status link IRF630
Product summary
Order code
IRF630
Marking
IRF630
Package
TO-220
Packing
Tube
DS0668 - Rev 10 - December 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDDS
Drain-source voltage (VGS = 0 V)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
EAS(2)
Single pulse avalanche energy
dv/dt(3)
Drain-body diode dynamic dv/dt ruggedness
Tstg Storage temperature range
TJ Operating junction temperature range
1. Pulse width is limited by safe operating area. 2. Starting TJ = 25 °C, ID = 4.5 A 3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V,...
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