Document
PD - 94359
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC to DC converters
IRF6217
HEXFET® Power MOSFET RDS(on) max 2.4Ω@VGS =-10V ID
-0.7A
l
VDSS
-150V
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
S
1
8 7
A D D D D
S
S G
2
3
6
4
5
T op V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-0.7 -0.5 -5.0 2.5 0.02 ± 20 4.5 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
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02/13/02
IRF6217
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Typ. ––– -0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 2.4 Ω VGS = -10V, ID = -0.42A -5.0 V VDS = VGS, ID = -250µA -25 VDS = -150V, VGS = 0V, TJ = 25°C µA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 0.55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 6.0 1.6 2.8 12 7.2 14 16 150 30 10 150 15 45 Max. Units Conditions ––– S VDS = -50V, ID = -0.42A 9.0 ID = -0.42A 2.4 nC VDS = -120V 4.2 VGS = -10V, ––– VDD = -75V ––– ID = -0.42A ns ––– RG = 6.2Ω ––– VGS = -10V ––– VGS = 0V ––– VDS = -25V ––– pF ƒ = 1.0KHz ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz ––– VGS = 0V, VDS = -120V, ƒ = 1.0KHz ––– VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
15 -1.4
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 51 86 -1.8 A -5.0 -1.6 77 130 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -0.42A, VGS = 0V TJ = 25°C, IF = -0.42A di/dt = -100A/µs
D
S
2
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IRF6217
10
-I D, Drain-to-Source Current (A)
0.1
-5.0V
-I D , Drain-to-Source Current (A)
1
TOP BOTTOM VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V
10
1
TOP BOTTOM VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V
0.1
-5.0V
0.01 0.1 1
20µs PULSE WIDTH T J= 25 ° C
10 100
0.01 0.1 1
20µs PULSE WIDTH T J= 150
10 °C 100
-V DS, Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D = -0.70A
2.0
-I D , Drain-to-Source Current (A)
1
RDS(on) , Drain-to-Source On Resistance
TJ = 25 ° C
TJ = 150 ° C
(Normalized)
1.5
1.0
0.1
0.5
0.01 4 5 7 8
V DS= -50V 20µs PULSE WIDTH 9 11 12
0.0 -60 -40 -20 0 20 40 60 80
V GS = -10V
100 120 140 160
-V GS , Gate-to-Source Voltage (V)
TJ , Junction Temperature
( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF6217
10000 VGS = 0V, f = 1 MHZ Ciss = C + C gs gd, C ds SHORTED Crss = C gd Coss = C ds + Cgd
-V GS, Gate-to-Source Voltage (V)
8 12
ID = -0.42A
10
VDS = -120V VDS = -75V VDS = -30V
1000
C, Capacitance(pF)
100
Ciss
6
Coss
10
4
Crss
2
1 1 10 100 1000
0 0 2 4 6 8
-VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) 10
-I SD, Reverse Drain Current (A)
TJ = 150 ° C
1
1
100µsec 1msec
°C T J = 25
0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100
10msec
0.1 0.2 0.6 0.9
V GS= 0 V
1.3 1.6
0.01
1000
-V SD,Source-to-Drain Voltage (V)
-VD.