IRF6156

PD - 94592A IRF6156 Ultra Low RSS(on) per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode † Description l FlipFET Power MOSFET VSS 20V : 60m:@VGS1,2 = 2.5V 40m @VGS1,2 = 4.5V RSS(on) max IS ±6.5 ±5.2 True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provide the designer with an extremely efficient and reliable device. The FlipFET™ package, is one-fifth the footprint of a comparable TSSOP-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, mobile phones and PCMCIA cards. Absolute Maximum Ratings Parameter VSS IS @ TA = 25°C IS @ TA = 70°C ISM PD @TA = 25°C PD @TA = 70°C VGS TJ TSTG Source-to-Source Voltage Continuous Current, VGS1 = VGS2 = 4.5V Continuous Current, VGS1 = VGS2 Pulsed Current Max. Units V A W e Power Dissipation e Power Dissipation c e = 4.5V e 20 ±6.5 ±5....