IRF5851

PD-93998A IRF5851 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge N-Ch G1 1 6 D1 P-Ch -20V S2 2 5 S1 VDSS 20V G2 3 4 D2 RDS(on) 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. N-Channel 20 2.7 2.2 11 0.96 0.62 7.7 ± 12 -55 to + 150 P-Channel -20 -2.2 -1.7 -9.0 Units A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient ƒ Typ. ––– Max. 130 Units °C/W www.irf.com 1 2/...