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IRF5806

Power MOSFET

Description

PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V ID -4.0A -3.0A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc...

International Rectifier

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