IRF5803D2

PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. T op V ie w SO-8 Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current ➀ Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to +150 Units A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA RθJA Param...