IRF530FP
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE IRF530FP
s s s s s s
V DSS 100 V
R DS(on) < 0.16 Ω
ID 10 A
s s
TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPL...
