IRF530

IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW GATE CHARGE s HIGH CURRENT CAPABILITY 3 s 175 oC OPERATING TEMPERATURE t(s)DESCRIPTION This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is Palso intended for any applications with low gate drive terequirements. leAPPLICATIONS os HIGH CURRENT, HIGH SWITCHING SPEED bss SOLENOID AND RELAY DRIVERS Os REGULATOR -s DC-DC & DC-AC CONVERTERS t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, cABS, AIR-BAG, LAMPDRIVERS, etc.) roduABSOLUTE MAXIMUM RATINGS Symbol Parameter PVDS Drain-source Voltage (VGS = 0) teVDGR Drain-gate Voltage (RGS = 20 kΩ) leVGS Gate- source Voltage soID Drain Current (continuous) at TC = 25°C Ob ID Drain Current (continuous) at TC = 100°C 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 20 14 10 Unit V V V A A IDM() Drain Current (pulsed) 56 A Ptot Total Dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 70 mJ Tstg Storage Tem...