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IRF5210

International Rectifier

Power MOSFET


Description
PD - 91434A IRF5210 HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.06Ω G ID = -40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...



International Rectifier

IRF5210

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