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IRF430

N-Channel Power MOSFET

Description

IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for ...

Intersil Corporation

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