Power MOSFET
PD - 94338A
AUTOMOTIVE MOSFET
Typical Applications
q q
IRF3808S IRF3808L
HEXFET® Power MOSFET
D
Integrated Starter Al...
Description
PD - 94338A
AUTOMOTIVE MOSFET
Typical Applications
q q
IRF3808S IRF3808L
HEXFET® Power MOSFET
D
Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
Benefits
q q q q q q
VDSS = 75V
G S
RDS(on) = 0.007Ω ID = 106AV
Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
D2Pak IRF3808S
TO-262 IRF3808L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
106V 75 V 550 200 1.3 ± 20 430 82 See Fig.12a, 12b...
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